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Tektronix inc digital source meter 6514 2400
Digital Source Meter 6514 2400, supplied by Tektronix inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/2400+source+meter/digital+source+meter+6514+2400/10__1016_slash_j__seppur__2025__131459-86-15-17
Average 90 stars, based on 1 article reviews
digital source meter 6514 2400 - by Bioz Stars, 2026-11
90/100 stars

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other:

Article Title: Solvent-dripping modulated 3D/2D heterostructures for high-performance perovskite solar cells
Article Snippet: The J – V performance of the perovskite solar cells was analyzed using a Keithley 2400 source meter under N 2 conditions at room temperature, and the illumination intensity was 100 mW cm − 2 (AM 1.5G Abet Technologies Sun 3000 solar simulator).

Article Title: Solvent-dripping modulated 3D/2D heterostructures for high-performance perovskite solar cells.
Article Snippet: The J–V performance of the perovskite solar cells was analyzed using a Keithley 2400 source meter under N2 conditions at room temperature, and the illumination intensity was 100mW cm−2 (AM 1.5G Abet Technologies Sun 3000 solar simulator).

Article Title: Cu gradient design to attain high efficient solution-processed CuIn(S,Se)2 solar cells
Article Snippet: https://doi.org/10.1016/j.jechem.2024.09.04

Article Title: Landau-Levich Scaling for Optimization of Quantum Dot Layer Morphology and Thickness in Quantum-Dot Light-Emitting Diodes.
Article Snippet: The J−V−L characteristics of the QLEDs were analyzed using a Keithley 2400 source meter to record the J−V curve and a Keithley 6500 multimeter with a calibrated Thorlabs Si switchable gain detector (PDA100A2) to record luminance under ambient conditions.

Article Title: Breakdown of the Static Dielectric Screening Approximation of Coulomb Interactions in Atomically Thin Semiconductors.
Article Snippet: The gate voltage in the gate-tunable measurements was controlled by using a Keithley 2400 source meter.

Article Title: A new approach to N-polar n-GaN surface treatment for room-temperature transparent ohmic contact formation
Article Snippet: In this work, we propose a new approach to obtain as-deposited low-resistivity transparent ZnO:Al (AZO) ohmic contacts to n-GaN N-face by first modifying the GaN surface by depositing a standard Ti/Al/TiN/Au contact, forming it at 750 ◦C, and then removing the metallization by chemical etching.. To identify the mechanisms responsible for the contact’s ohmicity, the GaN interface was examined by (scanning) transmission electron microscopy, as well as time-of-flight secondary ion mass spectrometry.. We identified changes formed at the interface in the form of AlN pits growing epitaxially on GaN, a thin inhomogeneous AlN + Ti layer, and argue that this results in the formation of a highly doped subsurface GaN layer due to nitrogen diffusion which modifies the n-GaN surface in a way enabling to obtain an as-deposited low-resistive transparent AZO contact on it with current–voltage characteristics similar to a standard metallic contact formed at 750 ◦C.

Encapsulation:

Article Title: Carbonyl-nitrogen multi-resonance emitters for efficient OLEDs with high color purity
Article Snippet: .. All the characterizations were conducted at room temperature in ambient atmosphere without any encapsulation and EL spectra were obtained via a PhotoResearch PR670 spectroradiometer, with a Keithley 2400 Source Meter. ..

Suspension:

Article Title: Single-step, conformal, and efficient assembly of ligand-exchanged quantum dots for optoelectronic devices via an electric field.
Article Snippet: .. Measurement and calculation of the conductivity of the suspension The conductivity of the PbSe quantum dots (QDs) capped with NH4I in DFP was measured using a Keithley 2400 source meter and a parallel plate electrode geometry. ..



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